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2SK3666-3-TB-E

2SK3666-3-TB-E

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Manufacturer Part
2SK3666-3-TB-E
Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
JFET N-CH 10MA 200MW 3CP
Category
Discrete Semiconductor Products
Family
Transistors - JFETs
Series
-
InStock
12536
Datasheets Online
-
Inquiry

Product Specifications

Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):-
Drain to Source Voltage (Vdss):30 V
Current - Drain (Idss) @ Vds (Vgs=0):1.2 mA @ 10 V
Current Drain (Id) - Max:10 mA
Voltage - Cutoff (VGS off) @ Id:180 mV @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds:4pF @ 10V
Resistance - RDS(On):200 Ohms
Power - Max:200 mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:3-CP

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